EIC7177-10 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 7.10-7.70 ghz 10-watt intern ally-matched power fet features ? 7.10 ? 7.70 ghz bandwidth ? input/output impedance matched to 50 ohms ? +40.5 dbm output power at 1db compression ? 9 db power gain at 1db compression ? 35% power added efficiency ? -46 dbc im3 at po = 29.5 dbm scl ? hermetic metal flange package ? 100% tested for dc, rf, and r th description the EIC7177-10 is a high power, highly linear, single stage mfet amplifier in a flange mount package. this amplifier features excelics? unique mesfet transistor technology. caution! esd sensitive device. electrical characteristics (t a = 25 c) symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 7.10-7.70ghz v ds = 10 v, i dsq 3200ma 39.5 40.5 dbm g 1db gain at 1db compression f = 7.10-7.70ghz v ds = 10 v, i dsq 3200ma 8.0 9.0 db ? g gain flatness f = 7.10-7.70ghz v ds = 10 v, i dsq 3200ma 0.6 db pae power added efficiency at 1db compression v ds = 10 v, i dsq 3200ma f = 7.10-7.70ghz 35 % id 1db drain current at 1db compression f = 7.10-7.70ghz 3200 3600 ma im3 output 3rd order intermodulation distortion ? f = 10 mhz 2-tone test; pout = 29.5 dbm s.c.l 2 v ds = 10 v, i dsq 65% idss f = 7.70 ghz -43 -46 dbc i dss saturated drain current v ds = 3 v, v gs = 0 v 5800 6400 ma v p pinch-off voltage v ds = 3 v, i ds = 60 ma -2.5 -4.0 v r th thermal resistance 3 2.5 3.0 o c/w notes: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth depends on case mounting.
EIC7177-10 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 .4 -0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 and s22 swp max 7.9ghz swp min 6.9ghz s[1,1] EIC7177-10 s[2,2] EIC7177-10 absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 10 v v gs gate to source voltage -4.5 v i ds drain current idss i gsf forward gate current 120 ma p in input power @ 3db compression p t total power dissipation 42 w t ch channel temperature 150c t stg storage temperature -65/+150c notes: 1. operating the device beyond any of the above ratings may result in permanent damage or reduction of mttf. 2. bias conditions must also satisfy the following equation p t < (t ch ?t pkg )/r th ; where t pkg = temperature of package, and p t = (v ds * i ds ) ? (p out ? p in ). performance data typical s-parameters (t= 25c, 50 ? system, de-embedded to edge of package) v ds = 10 v, i dsq 3200ma 6.9 7.1 7.3 7.5 7.7 7.9 frequency (ghz) s21 and s12 -20 -10 0 10 s21 and s12 (db) db(|s[2,1]|) EIC7177-10 db(|s[1,2]|) EIC7177-10 freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 6.5 0.7175 -118.04 2.3853 -7 .81 0.0894 -64.67 0.3979 134.6 6.7 0.6394 -138.29 2.5751 -32.99 0.0982 -88.45 0.4476 105.78 6.9 0.54 -161.16 2.7688 -59. 03 0.1091 -114.52 0.4847 78.66 7.1 0.4059 172.55 2.9473 -86.83 0.1214 -141.21 0.4996 51.55 7.3 0.2293 138.08 3.0573 -116.9 0.1304 -170.74 0.4755 22.06 7.5 0.0747 37.07 3.0519 -148.09 0.135 158.19 0.4083 -11.96 7.7 0.2466 -62.75 2.8762 179. 32 0.1302 126.14 0.3168 -54.79 7.9 0.4397 -98.59 2.5317 147.48 0.1164 95.19 0.261 -109.71 8.1 0.583 -126.77 2.1134 117.67 0.0983 66.91 0.2876 -160.97 8.3 0.6761 -150.57 1.7287 91.05 0.0833 40.52 0.3632 165.41 8.5 0.7392 -171.1 1.3981 66.41 0.0708 18.29 0.4355 143.08
EIC7177-10 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 power de-rating curve and im3 definition power dissipation vs. temperature 0 6 12 18 24 30 36 42 48 0 25 50 75 100 125 150 case temperature (c) total power dissipation (w) safe operating region potentially unsaf e operating region f1 f2 (2f1-f2) f1 f2 (2f2-f1) im3 pout pin ip 3 = pout + im3/2 third-order intercept point ip3 f1 or f2 (2f2 - f1) or (2f1 - f2) pin [s.c.l.] (dbm) pout [s.c.l.] (dbm) im3 typical power data (v ds = 10 v, i dsq = 3200 ma) typical im3 data (v ds = 10 v, i dsq 65% idss ) p-1db & g-1db vs frequency 37 38 39 40 41 42 7.07.17.27.37.47.57.67.77.8 frequency (ghz) p-1db (dbm) 7 8 9 10 11 12 g-1db (db) p-1db (dbm) g-1db (db) im3 vs output power f 1 = 7.40 ghz, f2 = 7.41 ghz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 24 25 26 27 28 29 30 31 32 33 34 35 36 pout [s.c.l.] (dbm) im3 (dbc ) im3 (dbc)
EIC7177-10 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2003 package outline dimensions in inches, tolerance + .005 unless otherwise specified sn excelics ym ordering information part number grade 1 f test (ghz) p 1db (min) im 3 (min) 2 EIC7177-10 industrial 7.1-7.7 ghz 39.5 -43 notes: 1. contact factory for military and hi-rel grades. 2. exact test conditions are specified in ?electrical characteristics? table. EIC7177-10 source
|
